Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98017
Title: PN-type quantum barrier for InGaN/GaN light emitting diodes
Authors: Zhang, Zi-Hui
Tan, Swee Tiam
Ji, Yun
Liu, Wei
Ju, Zhengang
Kyaw, Zabu
Sun, Xiaowei
Demir, Hilmi Volkan
Issue Date: 2013
Source: Zhang, Z.-H., Tan, S. T., Ji, Y., Liu, W., Ju, Z., Kyaw, Z., et al. (2013). PN-type quantum barrier for InGaN/GaN light emitting diodes. Optics express, 21(13).
Series/Report no.: Optics express
Abstract: In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs.
URI: https://hdl.handle.net/10356/98017
http://hdl.handle.net/10220/12228
ISSN: 1094-4087
DOI: 10.1364/OE.21.015676
Rights: © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.21.015676]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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