dc.contributor.authorMario, Hendro
dc.contributor.authorLim, Meng Keong
dc.contributor.authorGan, Chee Lip
dc.date.accessioned2013-07-25T08:44:46Z
dc.date.available2013-07-25T08:44:46Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationMario, H., Lim, M. K., & Gan, C. L. (2012). Impact of pre-existing voids on electromigration in copper interconnects. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).en_US
dc.identifier.urihttp://hdl.handle.net/10220/12313
dc.description.abstractPrevious in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.en_US
dc.language.isoenen_US
dc.rights© 2012 IEEE.en_US
dc.titleImpact of pre-existing voids on electromigration in copper interconnectsen_US
dc.typeConference Paper
dc.contributor.conferenceInternational Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore)en_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/IPFA.2012.6306330


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