Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98228
Title: The link between NBTI and TDDB of high-k gate P-MOSFETs
Authors: Gao, Yuan
Ang, Diing Shenp
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Gao, Y., & Ang, D. S. (2012). The link between NBTI and TDDB of high-k gate P-MOSFETs. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Abstract: The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.
URI: https://hdl.handle.net/10356/98228
http://hdl.handle.net/10220/12359
DOI: 10.1109/IPFA.2012.6306262
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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