The link between NBTI and TDDB of high-k gate P-MOSFETs
Ang, Diing Shenp
Date of Issue2012
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore)
School of Electrical and Electronic Engineering
The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.
DRNTU::Engineering::Electrical and electronic engineering
© 2012 IEEE.