dc.contributor.authorDing, Y.
dc.contributor.authorPoenar, Daniel P.
dc.contributor.authorIsakov, D. V.
dc.date.accessioned2013-07-26T03:37:03Z
dc.date.available2013-07-26T03:37:03Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationDing, Y., Poenar, D. P., & Isakov, D. V. (2012). Local current measurements for avalanche breakdown in Silicon p-n junctions. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.en_US
dc.identifier.urihttp://hdl.handle.net/10220/12362
dc.description.abstractApplication of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a linear dependence between emission intensity and biasing current. However, inconclusive understanding of photon emission phenomena in Silicon stopped the research community form applying PEM for local current estimation. In this paper we show for the first time that the linear relationship is valid for avalanche breakdown in the range of currents across five orders of magnitude. And we conclude that the observed relationship is independent of non-radiative effects. Using the observed photon emission pattern we perform a detailed analysis of the influence of the junction geometry and doping topology on the breakdown phenomenon. We also for the first time estimate the local I-V curves in the junction and demonstrate the complexity of the breakdown phenomenon. Our results also demonstrate a poor applicability of global I-V curve measurements for calibration of existing TCAD models.en_US
dc.language.isoenen_US
dc.rights© 2012 IEEE.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleLocal current measurements for avalanche breakdown in Silicon p-n junctionsen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore)en_US
dc.contributor.researchSingapore Institute of Manufacturing Technologyen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/IPFA.2012.6306254


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