Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98835
Title: N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
Authors: Ivana
Subramanian, Sujith
Owen, Man Hon Samuel
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Yoon, Soon Fatt
Yeo, Yee-Chia
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Ivana, Subramanian, S., Owen, M. H. S., Tan, K. H., Loke, W. K., Wicaksono, S., Yoon, S. F., & Yeo, Y. C. (2012). N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates. Applied Physics Express, 5(11).
Series/Report no.: Applied physics express
Abstract: InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni–InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm·tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique.
URI: https://hdl.handle.net/10356/98835
http://hdl.handle.net/10220/12545
DOI: 10.1143/APEX.5.116502
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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