dc.contributor.authorLiu, Xinke
dc.contributor.authorZhan, Chunlei
dc.contributor.authorChan, Kwok Wai
dc.contributor.authorLiu, Wei
dc.contributor.authorTan, Leng Seow
dc.contributor.authorChen, Kevin Jing
dc.contributor.authorYeo, Yee-Chia
dc.date.accessioned2013-07-31T03:42:58Z
dc.date.available2013-07-31T03:42:58Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLiu, X., Zhan, C., Chan, K. W., Liu, W., Tan, L. S., Chen, K. J.,& Yeo, Y. C. (2012). AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ·cm2 Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process. Applied Physics Express, 5(6).en_US
dc.identifier.urihttp://hdl.handle.net/10220/12574
dc.description.abstractThis letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics expressen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleAlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free processen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1143/APEX.5.066501


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