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|Title:||Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy||Authors:||Dharmarasu, Nethaji
Lee, Kenneth E.
Ing, Ng Geok
|Issue Date:||2012||Source:||Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Ravikiran, L., Arulkumaran, S., Lee, K. E.,& Ing, N. G. (2012). Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy. Applied Physics Express, 5(9), 091003-.||Series/Report no.:||Applied physics express||Abstract:||We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm2/V·s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (IDmax) of 768 mA/mm at Vg= +1 V and a maximum extrinsic transconductance (gmmax) of 190 mS/mm at VD= 6 V.||URI:||https://hdl.handle.net/10356/99411
|DOI:||http://dx.doi.org/10.1143/APEX.5.091003||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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