Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief
Li, Hong Yu
Tan, Cher Ming
Tan, Chuan Seng
Date of Issue2012
School of Electrical and Electronic Engineering
Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus.
DRNTU::Engineering::Electrical and electronic engineering
Applied physics express
© 2012 The Japan Society of Applied Physics (JSAP).