Please use this identifier to cite or link to this item:
|Title:||Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization||Authors:||Tan, Chuan Seng
Lim, Dau Fatt
Li, Hong Yu
|Issue Date:||2012||Abstract:||Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.||URI:||https://hdl.handle.net/10356/99123
|DOI:||http://dx.doi.org/10.1109/LTB-3D.2012.6238046||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.