dc.contributor.authorNg, Geok Ing
dc.contributor.authorArulkumaran, Subramaniam
dc.contributor.authorVicknesh, Sahmuganathan
dc.contributor.authorWang, H.
dc.contributor.authorAng, K. S.
dc.contributor.authorKumar, C. M. Manoj
dc.contributor.authorRanjan, K.
dc.contributor.authorLo, Guo-Qiang
dc.contributor.authorTripathy, Sudhiranjan
dc.contributor.authorBoon, Chirn Chye
dc.contributor.authorLim, Wei Meng
dc.description.abstractThis work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax of of 64GHz. These device performances are comparable to our reported devices fabricated on 4-inch Si substrate. We have also developed a GaN HEMT process with CMOS-compatible non-gold metal scheme. Excellent ohmic contacts (Rc=0.24 Ω-mm) with smooth surface morphology have been achieved which are comparable to those using conventional III-V gold-based ohmic contacts. 0.15-μm gate-length GaN HEMTs fabricated with this process achieved fT and fmax of 51 GHz and 50GHz respectively. The 5nm-thick AlGaN barrier HEMT exhibited three terminal OFF-state breakdown voltage (BVgd) of 83 V. Our results demonstrate the feasibility of realizing CMOS-compatible high performance GaN HEMTs on 8-inch silicon substrates for future GaN-on-Si integration.en_US
dc.titleGaN-on-Silicon integration technologyen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE International Symposium on Radio-Frequency Integration Technology (2012 : Singapore)en_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US

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