dc.contributor.authorLiu, L.
dc.contributor.authorZou, X.
dc.contributor.authorGoh, Wang Ling
dc.contributor.authorRajkumar, Ramamoorthy
dc.contributor.authorDawe, Gavin
dc.contributor.authorJe, Minkyu
dc.date.accessioned2013-08-29T07:57:58Z
dc.date.available2013-08-29T07:57:58Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLiu, L., Zou, X., Goh, W., Rajkumar, R, Dawe, G., & Je, M. (2012). 800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor. Electronics letters, 48(9), 479.en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10220/13265
dc.description.abstractAdvances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/ p Hz and the input-referred noise is 5.71 mVrms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mm CMOS technology, occupying an area of 0.05 mm2.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesElectronics lettersen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.title800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factoren_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1049/el.2012.0685


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