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|Title:||Design of an electronic synapse with spike time dependent plasticity based on resistive memory device||Authors:||Hu, S. G.
Wu, H. T.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Hu, S. G., Wu, H. T., Liu, Y., Chen, T., Liu, Z., Yu, Q., Yin, Y., & Hosaka, S. (2013). Design of an electronic synapse with spike time dependent plasticity based on resistive memory device. Journal of Applied Physics, 113(11), 114502.||Series/Report no.:||Journal of applied physics||Abstract:||This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work according to the STDP rule, ensuring that the timing between pre and post-spikes leads to either the long term potentiation or long term depression. By using the synapse, a neural network with three neurons has been constructed to realize the STDP learning.||URI:||https://hdl.handle.net/10356/98141
|ISSN:||0021-8979||DOI:||http://dx.doi.org/10.1063/1.4795280||Rights:||© 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4795280]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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