dc.contributor.authorShim, Jaewoo
dc.contributor.authorShin, Jeong-hun
dc.contributor.authorLee, In-Yeal
dc.contributor.authorChoi, Daebeom
dc.contributor.authorBaek, Jung Woo
dc.contributor.authorHeo, Jonggon
dc.contributor.authorPark, Wonkyu
dc.contributor.authorLeem, Jung Woo
dc.contributor.authorYu, Jae Su
dc.contributor.authorJung, Woo-Shik
dc.contributor.authorSaraswat, Krishna
dc.contributor.authorPark, Jin-Hong
dc.date.accessioned2013-09-13T01:40:14Z
dc.date.available2013-09-13T01:40:14Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationShim, J., Shin, J., Lee, I.-Y., Choi, D., Baek, J. W., Heo, J., Park, W., Leem, J. W., Yu, J. S., Jung, W.-S., Saraswat, K.,& Park, J.-H. (2013). Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability. Journal of Applied Physics, 114(9), 094515.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/13441
dc.description.abstractIn this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through VGe. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal.en_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2013 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4820580].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleEffects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stabilityen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4820580
dc.description.versionPublished versionen_US
dc.identifier.rims174612


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