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|Title:||Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress||Authors:||Liao, Hong
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||IEEE transactions on electron devices||Abstract:||In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electron injection Einj. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO2 interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.||URI:||https://hdl.handle.net/10356/98943
|ISSN:||0018-9383||DOI:||http://dx.doi.org/10.1109/TED.2012.2212022||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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