Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98943
Title: Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress
Authors: Liao, Hong
Hu, Hang
Su, Hao
Wang, Hong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE transactions on electron devices
Abstract: In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electron injection Einj. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO2 interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.
URI: https://hdl.handle.net/10356/98943
http://hdl.handle.net/10220/13449
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2012.2212022
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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