Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98941
Title: Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
Authors: Hu, S. G.
Liu, Yang
Chen, Tupei
Liu, Zhen
Yang, Ming
Yu, Qi
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE transactions on electron devices
Abstract: The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching.
URI: https://hdl.handle.net/10356/98941
http://hdl.handle.net/10220/13453
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2012.2186300
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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