Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98992
Title: Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
Authors: Wu, L.
Wang, Zhongrui
Zhu, W. G.
Du, A. Y.
Fang, Z.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
Yu, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Wang, Z., Zhu, W. G., Du, A. Y., Wu, L., Fang, Z., Tran, X. A., et al. (2012). Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping. IEEE transactions on electron devices, 59(4), 1203-1208.
Series/Report no.: IEEE transactions on electron devices
Abstract: Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.
URI: https://hdl.handle.net/10356/98992
http://hdl.handle.net/10220/13474
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2012.2182770
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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