Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
Zhu, W. G.
Du, A. Y.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
Date of Issue2012
School of Electrical and Electronic Engineering
Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on electron devices
© 2012 IEEE