Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
Green, James E.
Loh, Wei Sun.
Marshall, Andrew R. J.
Ng, Beng Koon
Tozer, Richard C.
David, John P. R.
Soloviev, Stanislav I.
Sandvik, Peter M.
Date of Issue2012
School of Electrical and Electronic Engineering
Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient α from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient α at low fields. The more readily ionizing hole coefficient β remains very similar to prior work.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on electron devices
© 2012 IEEE