Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99021
Title: Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells
Authors: Fang, Z.
Chroboczek, J. A.
Ghibaudo, G.
Buckley, J.
De Salvo, B.
Li, X.
Yu, Hongyu
Kwong, Dim Lee
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Fang, Z., Yu, H., Chroboczek, J. A., Ghibaudo, G., Buckley, J., De Salvo, B., et al. (2012). Low-Frequency Noise in Oxide-Based (TiN/HfOx/Pt) Resistive Random Access Memory Cells. IEEE Transactions on Electron Devices, 59(3), 850-853.
Series/Report no.: IEEE transactions on electron devices
Abstract: In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the high resistance state, it is a uniform leakage current throughout the whole device area. An LFN model is proposed for the filamentary LRS based on the carrier number fluctuation approach, allowing physical analysis of filament characteristics and the surrounding trap concentration.
URI: https://hdl.handle.net/10356/99021
http://hdl.handle.net/10220/13477
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2011.2178245
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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