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|Title:||Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures||Authors:||Zhu, Wei
Fung, Stevenson Hon Yuen
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Zhu, W., Chen, T., Yang, M., Liu, Y., & Fung, S. H. Y. (2012). Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures. IEEE transactions on electron devices, 59(9), 2363-2367.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures.||URI:||https://hdl.handle.net/10356/98989
|ISSN:||0018-9383||DOI:||10.1109/TED.2012.2205692||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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