Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98989
Title: Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
Authors: Zhu, Wei
Chen, Tupei
Yang, Ming
Liu, Yang
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Zhu, W., Chen, T., Yang, M., Liu, Y., & Fung, S. H. Y. (2012). Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures. IEEE transactions on electron devices, 59(9), 2363-2367.
Series/Report no.: IEEE transactions on electron devices
Abstract: Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures.
URI: https://hdl.handle.net/10356/98989
http://hdl.handle.net/10220/13478
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2205692
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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