dc.contributor.authorZhu, Wei
dc.contributor.authorChen, Tupei
dc.contributor.authorYang, Ming
dc.contributor.authorLiu, Yang
dc.contributor.authorFung, Stevenson Hon Yuen
dc.date.accessioned2013-09-16T06:30:21Z
dc.date.available2013-09-16T06:30:21Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationZhu, W., Chen, T., Yang, M., Liu, Y., & Fung, S. H. Y. (2012). Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures. IEEE transactions on electron devices, 59(9), 2363-2367.
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10220/13478
dc.description.abstractResistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE transactions on electron devicesen_US
dc.rights© 2012 IEEEen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleResistive switching behavior of partially anodized aluminum thin film at elevated temperaturesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2012.2205692


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