Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/106611
Title: | The effect of annealing temperature on the optical properties of In2S3 thin film | Authors: | Mathews, Nripan Mhaisalkar, Subodh Gautam Boxi, Xu Kumar, Mulmudi Hemant Prabhakar, Rajiv Ramanujam |
Keywords: | DRNTU::Engineering::Materials | Issue Date: | 2012 | Source: | Boxi, X., Kumar, M. H., Prabhakar, R. R., Mathews, N., & Mhaisalkar, S. G. (2012). The effect of annealing temperature on the optical properties of In2S3 thin film. Nanoscience and nanotechnology letters, 4(7), 747-749(3). | Series/Report no.: | Nanoscience and nanotechnology letters | Abstract: | Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere. | URI: | https://hdl.handle.net/10356/106611 http://hdl.handle.net/10220/13646 |
DOI: | 10.1166/nnl.2012.1386 | Schools: | School of Materials Science & Engineering | Research Centres: | Energy Research Institute @ NTU (ERI@N) | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | ERI@N Journal Articles MSE Journal Articles |
Web of ScienceTM
Citations
50
1
Updated on Oct 30, 2023
Page view(s) 5
974
Updated on Mar 29, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.