Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
Author
Yu, Q.
Lim, Wei Meng
Hu, S. G.
Chen, Tupei
Deng, L. J.
Liu, Y.
Date of Issue
2012School
School of Electrical and Electronic Engineering
Abstract
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
Subject
DRNTU::Engineering::Electrical and electronic engineering
Type
Journal Article
Series/Journal Title
Nanoscience and nanotechnology letters
Collections
http://dx.doi.org/10.1166/nnl.2012.1398
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