Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
Lim, Wei Meng
Hu, S. G.
Deng, L. J.
Date of Issue2012
School of Electrical and Electronic Engineering
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
DRNTU::Engineering::Electrical and electronic engineering
Nanoscience and nanotechnology letters