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      Flexible nanoscale memory device based on resistive switching in nickel oxide thin film

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      Author
      Yu, Q.
      Lim, Wei Meng
      Hu, S. G.
      Chen, Tupei
      Deng, L. J.
      Liu, Y.
      Date of Issue
      2012
      School
      School of Electrical and Electronic Engineering
      Abstract
      In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Journal Article
      Series/Journal Title
      Nanoscience and nanotechnology letters
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      • EEE Journal Articles
      http://dx.doi.org/10.1166/nnl.2012.1398
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