A new model of stacked transformers considering skin and substrate effects
Date of Issue2012
IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China)
School of Electrical and Electronic Engineering
A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by measured S-parameters up to 40 GHz. The simulated S-parameters, quality factor Q, coil inductance and magnetic coupling coefficient, all show excellent agreement with measured data over the entire frequency range.
DRNTU::Engineering::Electrical and electronic engineering