A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
Tran, Xuan Anh
Date of Issue2012
IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China)
School of Electrical and Electronic Engineering
We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.
DRNTU::Engineering::Electrical and electronic engineering