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|Title:||A self-rectifying and forming-free HfOx based-high performance unipolar RRAM||Authors:||Yu, Hongyu
Tran, Xuan Anh
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Yu, H., & Tran, X. A. (2012). A self-rectifying and forming-free HfOx based-high performance unipolar RRAM. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT).||Abstract:||We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.||URI:||https://hdl.handle.net/10356/101336
|DOI:||10.1109/ICSICT.2012.6467660||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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