Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101336
Title: A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
Authors: Yu, Hongyu
Tran, Xuan Anh
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Yu, H., & Tran, X. A. (2012). A self-rectifying and forming-free HfOx based-high performance unipolar RRAM. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Abstract: We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.
URI: https://hdl.handle.net/10356/101336
http://hdl.handle.net/10220/16274
DOI: 10.1109/ICSICT.2012.6467660
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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