Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101274
Title: A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application
Authors: Gao, Bin
Kang, Jinfeng
Chen, Bing
Huang, Peng
Ma, Long
Zhang, Feifei
Liu, Lifeng
Liu, Xiaoyan
Tran, Xuan Anh
Yu, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Gao, B., Kang, J., Chen, B., Huang, P., Ma, L., Zhang, F., Liu, L., Liu, X., Tran, X. A., & Yu, H. (2012). A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-3.
Abstract: A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current <; 0.5 μA and good reliability (retention @ 150 °C > 104 seconds and endurance > 104 cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector.
URI: https://hdl.handle.net/10356/101274
http://hdl.handle.net/10220/16309
DOI: http://dx.doi.org/10.1109/ICSICT.2012.6467645
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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