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|Title:||A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application||Authors:||Gao, Bin
Tran, Xuan Anh
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Gao, B., Kang, J., Chen, B., Huang, P., Ma, L., Zhang, F., Liu, L., Liu, X., Tran, X. A., & Yu, H. (2012). A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-3.||Abstract:||A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current <; 0.5 μA and good reliability (retention @ 150 °C > 104 seconds and endurance > 104 cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector.||URI:||https://hdl.handle.net/10356/101274
|DOI:||http://dx.doi.org/10.1109/ICSICT.2012.6467645||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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