dc.contributor.authorTan, Cher Ming
dc.contributor.authorFu, Chunmiao
dc.date.accessioned2013-10-10T01:10:11Z
dc.date.available2013-10-10T01:10:11Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationTan, C. M., & Fu, C. (2012). Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4.
dc.identifier.urihttp://hdl.handle.net/10220/16310
dc.description.abstractReservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectiveness of reservoir length. We found that current density has no impact at all, but higher line temperature improves the effectiveness. As for the low-K dielectric used, most of them do not affect the effectiveness except CDO which degrade its effectiveness. In all cases, the saturation length where the enhancement ceases remain at around 50 nm, and it is not affected by the above-mentioned parameters.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleEffectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodesen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ICSICT.2012.6467816


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record