A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
Kumar, Thangarasu Bharatha
Yeo, Kiat Seng
Lim, Wei Meng
Date of Issue2012
IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)
School of Electrical and Electronic Engineering
This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm.
DRNTU::Engineering::Electrical and electronic engineering
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