A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
Date of Issue
2012Conference Name
IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)
School
School of Electrical and Electronic Engineering
Version
Accepted version
Abstract
This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm.
Subject
DRNTU::Engineering::Electrical and electronic engineering
Type
Conference Paper
Rights
© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/APCCAS.2012.6419001].
Collections
http://dx.doi.org/10.1109/APCCAS.2012.6419001
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