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      A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

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      12-GHz High Output Power Amplifier using 0.18um SiGe BiCMOS for low power applications.pdf (224.4Kb)
      Author
      Kumar, Thangarasu Bharatha
      Ma, Kaixue
      Yeo, Kiat Seng
      Lim, Wei Meng
      Date of Issue
      2012
      Conference Name
      IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)
      School
      School of Electrical and Electronic Engineering
      Version
      Accepted version
      Abstract
      This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Conference Paper
      Rights
      © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/APCCAS.2012.6419001].
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      • EEE Conference Papers
      http://dx.doi.org/10.1109/APCCAS.2012.6419001
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