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https://hdl.handle.net/10356/101540| Title: | A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications | Authors: | Kumar, Thangarasu Bharatha Ma, Kaixue Yeo, Kiat Seng Lim, Wei Meng |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Kumar, T. B., Ma, K., Yeo, K. S., & Lim, W. M. (2012). A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.180-183. | Abstract: | This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm. | URI: | https://hdl.handle.net/10356/101540 http://hdl.handle.net/10220/16332 |
DOI: | http://dx.doi.org/10.1109/APCCAS.2012.6419001 | Rights: | © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/APCCAS.2012.6419001]. | metadata.item.grantfulltext: | open | metadata.item.fulltext: | With Fulltext |
| Appears in Collections: | EEE Conference Papers |
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| 12-GHz High Output Power Amplifier using 0.18um SiGe BiCMOS for low power applications.pdf | 224.47 kB | Adobe PDF |  View/Open |
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