dc.contributor.authorDo, Anh Tuan
dc.contributor.authorLam, Chun Kit
dc.contributor.authorTan, Yung Sern
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorCheong, Jia Hao
dc.contributor.authorYao, Lei
dc.contributor.authorTan, Meng Tong
dc.contributor.authorJe, Minkyu
dc.identifier.citationDo, A. T., Lam, C. K., Tan, Y. S., Yeo, K. S., Cheong, J. H., Yao, L., Tan, M. T., & Je, M. (2012). A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.1-4.
dc.description.abstractThis paper presents an ultra low-power SAR ADC in 0.18 μm CMOS technology for epileptic seizure detection applications. The ADC is powered by a single supply voltage of both analog and digital circuits to avoid using the level-shifters. A latched comparator is used to quickly generate the comparison results while consuming no DC current. Split-cap architecture with an attenuation cap is used to minimize area and to further reduce the power consumption. A smaller-than-unit capacitor is used at the end of the least significant bit array to mitigate the negative impact of the parasitic components on the linearity of the capacitors array. As a result, both DNL/INL and SNDR of the ADC is improved. Our post-layout simulation shows that at 1 V supply, 1 kS/s the proposed SAR archives 8.7 ENOB while consuming only 9.87 nW. This yields an FOM of 23.7 fJ/conversion-step. Its leakage power consumption is 1.46 nW.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleA 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystemsen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US

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