dc.contributor.authorDo, Anh Tuan
dc.contributor.authorLam, Chun Kit
dc.contributor.authorTan, Yung Sern
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorCheong, Jia Hao
dc.contributor.authorYao, Lei
dc.contributor.authorTan, Meng Tong
dc.contributor.authorJe, Minkyu
dc.date.accessioned2013-10-10T02:37:37Z
dc.date.available2013-10-10T02:37:37Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationDo, A. T., Lam, C. K., Tan, Y. S., Yeo, K. S., Cheong, J. H., Yao, L., Tan, M. T., & Je, M. (2012). A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.1-4.
dc.identifier.urihttp://hdl.handle.net/10220/16334
dc.description.abstractThis paper presents an ultra low-power SAR ADC in 0.18 μm CMOS technology for epileptic seizure detection applications. The ADC is powered by a single supply voltage of both analog and digital circuits to avoid using the level-shifters. A latched comparator is used to quickly generate the comparison results while consuming no DC current. Split-cap architecture with an attenuation cap is used to minimize area and to further reduce the power consumption. A smaller-than-unit capacitor is used at the end of the least significant bit array to mitigate the negative impact of the parasitic components on the linearity of the capacitors array. As a result, both DNL/INL and SNDR of the ADC is improved. Our post-layout simulation shows that at 1 V supply, 1 kS/s the proposed SAR archives 8.7 ENOB while consuming only 9.87 nW. This yields an FOM of 23.7 fJ/conversion-step. Its leakage power consumption is 1.46 nW.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleA 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystemsen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/APCCAS.2012.6418956


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