View Item 
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Conference Papers
      • View Item
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Conference Papers
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.
      Subject Lookup

      Browse

      All of DR-NTUCommunities & CollectionsTitlesAuthorsBy DateSubjectsThis CollectionTitlesAuthorsBy DateSubjects

      My Account

      Login

      Statistics

      Most Popular ItemsStatistics by CountryMost Popular Authors

      About DR-NTU

      Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

      Thumbnail
      Author
      Lu, Y.
      Chen, B.
      Gao, Bin
      Fang, Z.
      Fu, Y. H.
      Yang, J. Q.
      Liu, L. F.
      Liu, X. Y.
      Yu, Hongyu
      Kang, J. F.
      Date of Issue
      2012
      Conference Name
      IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US)
      School
      School of Electrical and Electronic Engineering
      Abstract
      We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes are accordingly proposed and implemented to enhance the endurance behavior. More than 108 switching cycles are achieved in the TiN/HfOx/TiOx structured devices.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Conference Paper
      Collections
      • EEE Conference Papers
      http://dx.doi.org/10.1109/IRPS.2012.6241921
      Get published version (via Digital Object Identifier)

      Show full item record


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       

      DCSIMG