dc.contributor.authorCao, Qi
dc.contributor.authorTong, Cunzhu
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorLiu, Chongyang
dc.contributor.authorNgo, Chun Yong
dc.date.accessioned2013-10-14T04:02:03Z
dc.date.available2013-10-14T04:02:03Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationCao, Q., Tong, C., Yoon, S. F., Liu, C., & Ngo, C. Y. (2012). Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing. IEEE transactions on nanotechnology, 11(2), 231-235.
dc.identifier.urihttp://hdl.handle.net/10220/16468
dc.description.abstractSignificant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE transactions on nanotechnologyen_US
dc.subjectDRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
dc.titleImproved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealingen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TNANO.2010.2068558


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