Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection
Liu, W. J.
Tran, Xuan Anh
Wang, Z. R.
Zhang, J. F.
Zhu, H. L.
Date of Issue2012
School of Electrical and Electronic Engineering
Singapore Institute of Manufacturing Technology
Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on device and materials reliability