dc.contributor.authorLiu, W. J.
dc.contributor.authorSun, Xiaowei
dc.contributor.authorTran, Xuan Anh
dc.contributor.authorFang, Z.
dc.contributor.authorWang, Z. R.
dc.contributor.authorWang, F.
dc.contributor.authorWu, L.
dc.contributor.authorZhang, J. F.
dc.contributor.authorWei, J.
dc.contributor.authorZhu, H. L.
dc.contributor.authorYu, Hongyu
dc.identifier.citationLiu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481.
dc.description.abstractRaman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.en_US
dc.relation.ispartofseriesIEEE transactions on device and materials reliabilityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleVth shift in single-layer graphene field-effect transistors and its correlation with Raman inspectionen_US
dc.typeJournal Article
dc.contributor.researchSingapore Institute of Manufacturing Technologyen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US

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