dc.contributor.authorLiu, W. J.
dc.contributor.authorSun, Xiaowei
dc.contributor.authorTran, Xuan Anh
dc.contributor.authorFang, Z.
dc.contributor.authorWang, Z. R.
dc.contributor.authorWang, F.
dc.contributor.authorWu, L.
dc.contributor.authorZhang, J. F.
dc.contributor.authorWei, J.
dc.contributor.authorZhu, H. L.
dc.contributor.authorYu, Hongyu
dc.date.accessioned2013-10-16T03:29:04Z
dc.date.available2013-10-16T03:29:04Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLiu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481.
dc.identifier.urihttp://hdl.handle.net/10220/16505
dc.description.abstractRaman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE transactions on device and materials reliabilityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleVth shift in single-layer graphene field-effect transistors and its correlation with Raman inspectionen_US
dc.typeJournal Article
dc.contributor.researchSingapore Institute of Manufacturing Technologyen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TDMR.2012.2190414


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