Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102384
Title: 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration
Authors: Sui, W. Q.
Lu, Zhenghao
Lim, Wei Meng
Feng, Chen
Yu, Xiao Peng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Feng, C., Yu, X. P., Lu, Z. H., Lim, W. M., & Sui, W. Q. (2013). 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration. Electronics letters, 49(6), 387-388.
Series/Report no.: Electronics Letters
Abstract: A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 - 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply.
URI: https://hdl.handle.net/10356/102384
http://hdl.handle.net/10220/16519
ISSN: 0013-5194
DOI: http://dx.doi.org/10.1049/el.2012.4472
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.