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|Title:||3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration||Authors:||Sui, W. Q.
Lim, Wei Meng
Yu, Xiao Peng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Feng, C., Yu, X. P., Lu, Z. H., Lim, W. M., & Sui, W. Q. (2013). 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration. Electronics letters, 49(6), 387-388.||Series/Report no.:||Electronics Letters||Abstract:||A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 - 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply.||URI:||https://hdl.handle.net/10356/102384
|ISSN:||0013-5194||DOI:||http://dx.doi.org/10.1049/el.2012.4472||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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