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      Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects

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      Author
      Lee, Byunghoon
      Jeon, Haseok
      Kwon, Kee-Won
      Lee, Hoo-Jeong
      Date of Issue
      2013
      School
      School of Materials Science and Engineering
      Abstract
      This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effectively as a diffusion barrier and prevented full-scale materials interaction for temperatures higher than 300 °C. Such suppression of an intermetallic compound reaction and limiting Cu diffusion led to the formation of a rod-shaped Cu6Sn5 compound, rendering a unique microstructure of ductile Sn embedded with strong Cu6Sn5 rods. Our mechanical characterization using lap-shear testing and fracture analysis revealed that the sample with such a microstructure displayed a high bonding strength with some ductility, a desirable combination for high mechanical reliability.
      Subject
      DRNTU::Engineering::Materials::Metallic materials
      Type
      Journal Article
      Series/Journal Title
      Acta materialia
      Rights
      © 2013 Acta Materialia Inc.
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      • MSE Journal Articles
      http://dx.doi.org/10.1016/j.actamat.2013.07.043
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