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|Title:||Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects||Authors:||Lee, Byunghoon
|Keywords:||DRNTU::Engineering::Materials::Metallic materials||Issue Date:||2013||Source:||Lee, B., Jeon, H., Kwon, K. W., & Lee, H. J. (2013). Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Acta Materialia, 61(18), 6736-6742.||Series/Report no.:||Acta materialia||Abstract:||This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effectively as a diffusion barrier and prevented full-scale materials interaction for temperatures higher than 300 °C. Such suppression of an intermetallic compound reaction and limiting Cu diffusion led to the formation of a rod-shaped Cu6Sn5 compound, rendering a unique microstructure of ductile Sn embedded with strong Cu6Sn5 rods. Our mechanical characterization using lap-shear testing and fracture analysis revealed that the sample with such a microstructure displayed a high bonding strength with some ductility, a desirable combination for high mechanical reliability.||URI:||https://hdl.handle.net/10356/101556
|ISSN:||1359-6454||DOI:||http://dx.doi.org/10.1016/j.actamat.2013.07.043||Rights:||© 2013 Acta Materialia Inc.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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