Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101556
Title: Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects
Authors: Lee, Byunghoon
Jeon, Haseok
Kwon, Kee-Won
Lee, Hoo-Jeong
Keywords: DRNTU::Engineering::Materials::Metallic materials
Issue Date: 2013
Source: Lee, B., Jeon, H., Kwon, K. W., & Lee, H. J. (2013). Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Acta Materialia, 61(18), 6736-6742.
Series/Report no.: Acta materialia
Abstract: This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effectively as a diffusion barrier and prevented full-scale materials interaction for temperatures higher than 300 °C. Such suppression of an intermetallic compound reaction and limiting Cu diffusion led to the formation of a rod-shaped Cu6Sn5 compound, rendering a unique microstructure of ductile Sn embedded with strong Cu6Sn5 rods. Our mechanical characterization using lap-shear testing and fracture analysis revealed that the sample with such a microstructure displayed a high bonding strength with some ductility, a desirable combination for high mechanical reliability.
URI: https://hdl.handle.net/10356/101556
http://hdl.handle.net/10220/16535
ISSN: 1359-6454
DOI: http://dx.doi.org/10.1016/j.actamat.2013.07.043
Rights: © 2013 Acta Materialia Inc.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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