Low temperature grown GaNAsSb : a promising material for photoconductive switch application
Tan, Kian Hua
Yoon, Soon Fatt
Loke, Wan Khai
Li, D. S.
Lampin, J. F.
Date of Issue2013
School of Electrical and Electronic Engineering
We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.
DRNTU::Engineering::Electrical and electronic engineering
Applied physics letters
© 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4820797]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.