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|Title:||A ZnO nanowire resistive switch||Authors:||Ramanujam Prabhakar, Rajiv
Batabyal, Sudip Kumar
Mhaisalkar, Subodh Gautam
Karthik, K. R. G.
Huang, Y. Z.
|Keywords:||DRNTU::Engineering::Materials::Compositional materials science||Issue Date:||2013||Source:||Karthik, K. R. G., Ramanujam Prabhakar, R., Hai, L., Batabyal, S. K., Huang, Y. Z., & Mhaisalkar, S. G. (2013). A ZnO nanowire resistive switch. Applied physics letters, 103, 123114-1-123114-4.||Series/Report no.:||Applied physics letters||Abstract:||An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented.||URI:||https://hdl.handle.net/10356/107486
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.4821994||Rights:||© 2013 AIP Publishing LLC.This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4821994]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||ERI@N Journal Articles|
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