Property study of aluminium oxide thin films by thermal annealing
Tay, Beng Kang
Date of Issue2011
School of Electrical and Electronic Engineering
Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated.
DRNTU::Engineering::Electrical and electronic engineering
physica status solidi (c)