dc.contributor.authorThein, Than Tun
dc.contributor.authorLaw, Choi Look
dc.contributor.authorFu, Kai
dc.contributor.authorAung, A.
dc.date.accessioned2013-10-25T02:32:42Z
dc.date.available2013-10-25T02:32:42Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationThein, T. T., Law, C. L., Fu, K., & Aung, A. (2012). Highly efficient compact size 0.7W broad bandwidth power amplifier. 2012 IEEE International Symposium on Circuits and Systems, pp.2187-2190.en_US
dc.identifier.urihttp://hdl.handle.net/10220/16880
dc.description.abstractIn this paper, we present a highly efficient compact size three stage distributed power amplifier (DPA) for high power broad bandwidth applications. The DPA is fabricated using InGaP/GaAs hetero-junction bipolar transistor (HBT) technology. The design trade-off between power, efficiency and terminal matching is discussed. Reactive termination is used at the idle port of input and output transmission lines to improve efficiency. By compromising matching, the chip size is optimized to 1.8 mm2. Output power at 1dB gain compression (P1dB) is 30.5dBm at 3.5GHz and averages output power is around 28.5dBm across the (2.5 to 6) GHz band. The associated maximum and average Power Added Efficiency (PAE) at P1dB are 43% and 33%, respectively. Average large signal gain is 7 dB across the band. Small signal simulation results agree well with the measurements results.en_US
dc.language.isoenen_US
dc.rights© 2012 IEEEen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleHighly efficient compact size 0.7W broad bandwidth power amplifieren_US
dc.typeConference Paper
dc.contributor.conferenceIEEE International Symposium on Circuits and Systems (2012 : Seoul, Korea)en_US
dc.contributor.researchPositioning and Wireless Technology Centreen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ISCAS.2012.6271723


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