Effect of surface contamination on electron tunneling in the high bias range
Goh, Johnson Kuan Eng
Pey, Kin Leong
Date of Issue2012
School of Electrical and Electronic Engineering
The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between the experiments performed with in situ and ex situ deposited Au. Detailed studies show that the difference arises from the contaminations during air exposure. These contaminations significantly accelerated the material transfer between the tip and the sample during tunneling and lead to the unreliability of BEEM studies in the high bias range on the ex situ prepared sample.
DRNTU::Engineering::Electrical and electronic engineering
Journal of vacuum science & technology A
© 2012 American Vacuum Society. This paper was published in Journal of vacuum science & technology Aand is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official OpenURL: [http://dx.doi.org/10.1116/1.4721640]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.