Please use this identifier to cite or link to this item:
|Title:||Memory effects in the charge response of lightly doped La2−x Sr x CuO4||Authors:||Popović, Dragana
|Keywords:||DRNTU::Science::Physics::Electricity and magnetism||Issue Date:||2012||Source:||Raičević, I., Popović, D., Panagopoulos, C., & Sasagawa, T. (2012). Memory effects in the charge response of lightly doped La2−x Sr x CuO4. Journal of superconductivity and novel magnetism, 25(5), 1239-1242.||Series/Report no.:||Journal of superconductivity and novel magnetism||Abstract:||The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.||URI:||https://hdl.handle.net/10356/99255
|Appears in Collections:||SPMS Journal Articles|
checked on Dec 24, 2019
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.