Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99234
Title: Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices
Authors: Gong, Cheng
Yang, Hongbin
Song, Qun Liang
Li, Chang Ming
Keywords: DRNTU::Engineering::Chemical engineering
Issue Date: 2011
Source: Gong, C., Yang, H. B., Song, Q. L., & Li, C. M. (2011). Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices. Organic electronics, 13(1), 7-12.
Series/Report no.: Organic electronics
Abstract: Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices.
URI: https://hdl.handle.net/10356/99234
http://hdl.handle.net/10220/17175
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2011.10.006
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SCBE Journal Articles

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