Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99942
Title: Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires
Authors: Lu, Junpeng
Sun, Cheng
Zheng, Minrui
Wang, Yinghui
Nripan, Mathews
Kan, Jeroen A. van
Mhaisalkar, Subodh Gautam
Sow, Chorng Haur
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2012
Source: Lu, J., Sun, C., Zheng, M., Wang, Y., Nripan, M., Kan, J. A. V., et al. (2012). Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires. The journal of physical chemistry C, 116(41), 22015-22020.
Series/Report no.: The journal of physical chemistry C
Abstract: An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications.
URI: https://hdl.handle.net/10356/99942
http://hdl.handle.net/10220/17202
DOI: http://dx.doi.org/10.1021/jp305231j
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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