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|Title:||Interaction between graphene and the surface of SiO2||Authors:||Chihaia, Viorel
Fan, X. F.
Zheng, W. T.
|Issue Date:||2012||Source:||Fan, X. F., Zheng, W. T., Chihaia, V., Shen, Z., & Kuo, J.-L. (2012). Interaction between graphene and the surface of SiO2 . Journal of physics : condensed matter, 24(30), 305004.||Series/Report no.:||Journal of physics : condensed matter||Abstract:||The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a general consideration of the configuration structures of the SiO2 surface. It is found that the oxygen defect in a SiO2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO2 surface observed in a lot of experiments.||URI:||https://hdl.handle.net/10356/99241
|DOI:||http://dx.doi.org/10.1088/0953-8984/24/30/305004||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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