Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99241
Title: Interaction between graphene and the surface of SiO2
Authors: Chihaia, Viorel
Shen, Zexiang
Kuo, Jer-Lai
Fan, X. F.
Zheng, W. T.
Issue Date: 2012
Source: Fan, X. F., Zheng, W. T., Chihaia, V., Shen, Z., & Kuo, J.-L. (2012). Interaction between graphene and the surface of SiO2 . Journal of physics : condensed matter, 24(30), 305004.
Series/Report no.: Journal of physics : condensed matter
Abstract: The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a general consideration of the configuration structures of the SiO2 surface. It is found that the oxygen defect in a SiO2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO2 surface observed in a lot of experiments.
URI: https://hdl.handle.net/10356/99241
http://hdl.handle.net/10220/17247
DOI: http://dx.doi.org/10.1088/0953-8984/24/30/305004
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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