dc.contributor.authorPeng, Shengjie
dc.contributor.authorMhaisalkar, Subodh Gautam
dc.contributor.authorRamakrishna, Seeram
dc.date.accessioned2013-11-05T04:56:36Z
dc.date.available2013-11-05T04:56:36Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationPeng, S., Mhaisalkar, S. G., & Ramakrishna, S. (2012). Solution synthesis of CdIn2S4 nanocrystals and their photoelectrical application. Materials letters, 79, 216-218.en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/17254
dc.description.abstractCdIn2S4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV–vis spectroscopy. The results showed that the CdIn2S4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn2S4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450 °C for 30 min in Ar and sulfur atmospheres, the CdIn2S4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm− 2).en_US
dc.language.isoenen_US
dc.relation.ispartofseriesMaterials lettersen_US
dc.subjectDRNTU::Engineering::Materials
dc.titleSolution synthesis of CdIn2S4 nanocrystals and their photoelectrical applicationen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.matlet.2012.04.014


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