dc.contributor.authorGupta, Raju Kumar
dc.contributor.authorKusuma, Damar Yoga
dc.contributor.authorLee, P. S.
dc.contributor.authorSrinivasan, M. P.
dc.date.accessioned2013-11-05T05:46:40Z
dc.date.available2013-11-05T05:46:40Z
dc.date.copyright2011en_US
dc.date.issued2011
dc.identifier.citationGupta, R. K., Kusuma, D. Y., Lee, P. S., & Srinivasan, M. P. (2011). Copper nanoparticles embedded in a polyimide film for non-volatile memory applications. Materials letters, 68, 287-289.en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/17270
dc.description.abstractThe charge storage and retention characteristics of a nanoparticle-laden thin polyimide film were investigated for application in non-volatile memory devices. Well-dispersed and uniform sized metallic copper nanoparticles (CuNPs) were formed as embedded entities within the confines of polyimide film that was cast from solution. The nanoparticle-containing films were characterized by X-ray photoelectron spectroscopy, atomic force and scanning electron microscopies. Capacitance–voltage measurements showed that the embedded CuNPs functioned as a floating gate in metal–insulator–semiconductor-type capacitor and exhibited a large hysteresis window of 1.52 V. C–t measurements conducted after applying a charging bias of 5 V showed that the charge was retained beyond 20,000 s. The technique holds promise for developing low-cost processes for memory devices that employ relatively inexpensive materials, and yet demonstrate very good performance.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesMaterials lettersen_US
dc.subjectDRNTU::Engineering::Materials
dc.titleCopper nanoparticles embedded in a polyimide film for non-volatile memory applicationsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.matlet.2011.10.099


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