Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85520
Title: Ripple rotation on ion sputtered Si (100)
Authors: Qian, H. X.
Zhou, W.
Issue Date: 2012
Source: Qian, H. X., & Zhou, W. (2012). Ripple rotation on ion sputtered Si (100). Materials Letters, 77, 113-116.
Series/Report no.: Materials letters
Abstract: Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose, ripple with wavelength of 400 nm was oriented perpendicular to the ion beam direction. However ripple with larger wavelength of 1 μm was rotated with increasing ion dose. The orientation of rotated ripple was observed to be still dependent on the ion beam direction. Such rotated ripple structures can be explained by the nonlinear sputter patterning model.
URI: https://hdl.handle.net/10356/85520
http://hdl.handle.net/10220/17279
ISSN: 0167-577X
DOI: http://dx.doi.org/10.1016/j.matlet.2012.03.003
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
Appears in Collections:MAE Journal Articles

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