Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
Tan, Cher Ming
Date of Issue2006
School of Electrical and Electronic Engineering
Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.
Applied physics letters
© 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2185467]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.