dc.contributor.authorLi, Yuan
dc.contributor.authorZhao, Suling
dc.contributor.authorXu, Zheng
dc.contributor.authorZhang, Fujun
dc.contributor.authorZhao, Dewei
dc.contributor.authorSong, Jinglu
dc.contributor.authorHuang, Jinzhao
dc.contributor.authorYan, Guang
dc.contributor.authorKong, Chao
dc.contributor.authorXu, Xurong
dc.identifier.citationLi, Y., Zhao, S., Xu, Z., Zhang, F., Zhao, D., Song, J., et al. (2013). The effect of secondary electrons on emission. Journal of luminescence, 138, 89-93.en_US
dc.description.abstractThe effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO2, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO2/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current–illumination experiment is a proof of the existence and contribution of secondary electrons.en_US
dc.relation.ispartofseriesJournal of luminescenceen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleThe effect of secondary electrons on emissionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US

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