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|Title:||Large contrast enhancement by sonication assisted cold development process for low dose and ultrahigh resolution patterning on ZEP520A positive tone resist||Authors:||Tobing, Landobasa Yosef Mario A. L.
Zhang, Dao Hua
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2012||Source:||Tobing, L. Y. M. A. L., Tjahjana, L., & Zhang, D. H. (2012). Large contrast enhancement by sonication assisted cold development process for low dose and ultrahigh resolution patterning on ZEP520A positive tone resist. Journal of vacuum science & technology B : microelectronics and nanometer structures, 30(5), 051601-.||Series/Report no.:||Journal of vacuum science & technology B: microelectronics and nanometer structures||Abstract:||The authors demonstrate a robust, low dose, high contrast, and ultrahigh resolution patterning process based on sonication assisted development of ZEP520A positive tone resist in both room and cold temperature. The contrast as high as γ ∼ 25 and γ ∼ 9.14 can readily be achieved in 6 °C and room temperature development, respectively, in diluted n-amyl acetate solution. The high contrast is demonstrated on 90 nm thick ZEP resist at 20 kV acceleration voltage, from which 20 nm thick titanium lift-off of 60 nm pitch lines and 50 nm pitch dots can be successfully achieved.||URI:||https://hdl.handle.net/10356/99454
|ISSN:||2166-2746||DOI:||10.1116/1.4739053||Rights:||© 2012 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.4739053]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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