Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
Goh, Johnson Kuan Eng
Ong, Beng Sheng
Chiam, Sing Yang
Pey, Kin Leong
Date of Issue2012
School of Electrical and Electronic Engineering
Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole pairs excited by photons emitted during scanning tunneling microscopy(STM), and the second threshold at ∼3.55 eV, which is attributed to the Au/oxidized-GaAs barrier. Our results demonstrate that the two-threshold behavior observed in BEES studies on metal/oxide samples is amenable to a physical model comprising of STMphotocurrent and a metal/oxide interface barrier.
Journal of vacuum science & technology B: microelectronics and nanometer structures
© 2012 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.3675606]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.